The effect of heavy proton bombardment on n+-p InP/Si solar cells was investigated by using cathodoluminescence techniques. Before heavy bombardment, a non-uniform spatial distribution of the emitted luminescence was recorded from the base region, and was attributed to the presence of dislocations in the mismatched structures. The cathodoluminescence measurements showed that the dislocations acted as efficient channels for Zn diffusion. Under heavy bombardment, the overall cathodoluminescence intensity was reduced and became spatially uniform. It was concluded that the presence of dislocations did not affect either the production or stability of radiation-induced defects.

Cathodoluminescence study of heavily proton-irradiated heteroepitaxial n+-p InP/Si Solar Cells M.J.Romero, R.J.Walters, D.Araújo, R.García: Solid State Phenomena, 1998, 63-64, 497-508