Theoretical calculations were made of the distribution of In vacancies in a non-uniform temperature field caused by laser irradiation. Experiments were performed on p-type samples at temperatures ranging from 180 to 290K. Laser donor centers of 2 types were found. One was unstable and could be annealed out at room temperature. The other was stable and annealed out at 670K. The activation energy of the stable donors centers was about 1.1eV.

Generation of donor centers in p-InSb by laser radiation A.Medvid, L.Fedorenko: Materials Science Forum, 1999, 297-298, 311-4