The temperature dependence of the Hall coefficient and specific resistance was investigated, at temperatures ranging from 77 to 350K, in plastically deformed Pb0.95Sn0.05Se single crystals. The undeformed samples exhibited hole conductivity. It was found that dislocations which were introduced under single-slip conditions had a donor effect. As the degree of deformation was increased, the action of acceptors was compensated; leading to an inversion of conductivity type, in a narrow dislocation concentration interval, and a subsequent rise in electronic conductivity. The results were explained in terms of intrinsic point-defect formation during the slipping of screw and split edge dislocations with jogs. The Hall mobility results showed that, in the deformed crystals, scattering by both phonons and statistical lattice defects was a factor. The role of these defects increased with increasing dislocation concentration, and decreased with temperature. The temperature-dependence of the mobility decayed and flattened-out below a certain temperature (which increased with increasing dislocation concentration). It was shown that, because of the dielectric constant and carrier concentration values, scattering by a dislocation deformation potential was the predominant mechanism. In slightly deformed samples which exhibited hole conductivity, a sign inversion occurred in the Hall coefficient as the temperature was increased. This was attributed to the presence of a dislocation acceptor zone in the valence zone.

Effect of plastic deformation on transport phenomena in Pb0.95Sn0.05Se single crystals K.Z.Papazian, R.A.Vardanian: Philosophical Magazine B, 1999, 79[4], 541-63