Simulations were made of the annealing behavior of medium-dose (1013 to 1014/cm2) implanted P. It was shown that transient clustering of P had to be taken into account in order to achieve consistent simulations. Pile-up of P at the Si/oxide interface was considered by including a diffusion-segregation term in the diffusion-reaction equations. It was shown that P clustering affected the amount of P in the pile-up layer.

Simulation of clustering and pile-up during post-implantation annealing of phosphorus in silicon E.Schroer, M.Uematsu: Japanese Journal of Applied Physics - 1, 1999, 38[1A], 7-11