The effect of nitride films upon the diffusion of P and Sb was investigated in order to deduce the fractional interstitialcy component of their diffusivity. The nitride films, when deposited on the Si substrate, acted as an extrinsic source of vacancies. It was found that P diffusion was retarded and that Sb diffusion was enhanced under the nitride film. By monitoring variations in the retardation and enhancement, it was deduced that the interstitialcy components of P and Sb diffusion were approximately 0.96 and zero, respectively.

Fraction of interstitialcy component of phosphorus and antimony diffusion in silicon T.Shimizu, T.Takagi, S.Matsumoto, Y.Sato, E.Arai, T.Abe: Japanese Journal of Applied Physics - 1, 1998, 37[3B], 1184-7