An absorption line at 1025.5/cm was observed in hydrogenated Czochralski-grown crystals after irradiation with fast electrons and annealing at temperatures ranging from 300 to 400C. The line was found to be related to a local vibrational mode due to a DX-like H-related center with a shallow donor and a deep acceptor electronic level. This band was observed when the center was in the singly negatively-charged state. Transformation of the defect into the neutral charge state, due to photo-ionization, resulted in the disappearance of the LVM line and in the appearance of several absorption lines in the range of 250 to 325/cm. These lines were thought to be associated with ground-to-excited state electronic transitions in an effective mass-like shallow donor state of the center. Replacement of H by D resulted in a shift of the LVM band to 1027.9/cm. This unambiguously indicated H incorporation into the defect.

Local vibrational mode bands due to a DX-like hydrogen-related center in silicon V.P.Markevich, M.Suezawa, L.I.Murin: Journal of Applied Physics, 1998, 84[3], 1246-50