Wet chemical etching was used to introduce H into 10MeV electron-irradiated n-type material. The introduction of H caused a reduction in the concentration of the A center and divacancy, but led to formation of the NH1 electron trap (Ec-0.31eV). The latter trap was found to correspond to one of the H-related traps in H-implanted n-type Si. It had not been observed in electron-irradiated hydrogenated n-type Si. The NH1 trap was tentatively attributed to a vacancy-O pair which was partly saturated with H.

Deep-level transient spectroscopic study of hydrogen-related traps formed by wet chemical etching of electron-irradiated n-type silicon Y.Tokuda: Japanese Journal of Applied Physics - 1, 1998, 37[4A], 1815-6