An optical absorption study was made of the interaction between H, and point defects which were generated by electron irradiation of n-type crystals. The latter were doped with H by annealing in a H atmosphere at 1200C, followed by quenching, and then irradiating them with 3MV electrons at room temperature. Optical absorption spectra were obtained at about 6K, with a resolution of 0.25/cm. Many optical absorption peaks were observed in electron-irradiated specimens. Most of the peaks disappeared at about 300C; due to isochronal annealing. However, new absorption lines appeared at 2223/cm and 2166/cm after annealing at above 150C. The first line was known to be due to a complex involving 1 self-interstitial atom and four H atoms. It was proposed that the 2166/cm peak was clue to a complex which involved 1 self-interstitial atom and three H atoms. The results clearly showed that complexes of self-interstitials existed after the electron-irradiation of Si, and dissociated at above 150C.

Self-interstitial in electron-irradiated Si detected by optical absorption due to hydrogen bound to it M.Suezawa: Japanese Journal of Applied Physics - 2, 1998, 37[7A], L806-8