Charge-exchange and H diffusion/segregation dynamics were investigated for (111) surfaces. The back-scattered proton yield during H2+ ion bombardment of the surface increased significantly with irradiation time. This increase occurred because the implanted H tended to segregate to the outermost surface layer and passivated the active dangling bonds. Also, energetic protons which were back-scattered from the solid preferentially captured the dangling-bond electrons via transient chemisorption just before the protons left the surface.

In situ observation of charge exchange and surface segregation of hydrogen during low-energy H+ and H2+ scattering from semiconductor surfaces R.Souda, E.Asari, T.Suzuki, T.Tanaka, T.Aizawa: Physical Review Letters, 1998, 81[2], 465-8