The implantation of C ions was used to annihilate the end-of-range defects in Ge+-pre-amorphized material. The results showed that the efficiency of end-of-range defect removal depended upon the pre-amorphization conditions, upon the depth of the projected range of the C ions and upon the subsequent annealing conditions. The greatest defect removal occurred when the projected range of the implanted C was close to the amorphous/crystalline interface which was generated by the pre-amorphization. The higher the annealing temperature, the better was the interstitial gettering efficiency of the C atoms. Transmission electron microscopy revealed the development of hairpin dislocations when the dose and accelerating voltage of the Ge implantation were high. In specimens without C implantation, the hairpin dislocations could be easily removed by annealing (900C, 0.5h). In C-implanted specimens, the density of hairpin dislocations increased when the projected range of the C implantation was close to the amorphous/crystalline interface. The glide motion of hairpin dislocations was affected by the pre-amorphization conditions, and was inhibited by SiC complexes which formed in the vicinity of dislocations and made the latter difficult to anneal out.

Removal of end-of-range defects from Ge+ pre-amorphized Si by carbon ion-implantation P.S.Chen, T.E.Hsieh, C.H.Chu: Journal of Applied Physics, 1999, 85[6], 3114-9