The interaction of H with implantation-induced point defects in p-type material was monitored by using deep-level transient spectroscopy. The H ions were implanted to doses ranging from 109 to 1010/cm2. Vacancy- and interstitial-related defects were observed. As well as irradiation-induced defects with levels at Ev+0.19 and Ev+0.35eV, additional defect levels at 0.28 and 0.51eV above the valence band edge were detected. They were identified as being H-related. The generation of these defect levels, in the presence of H, was studied as a function of ion dose, sample depth and impurity content in as grown material. The level at Ev+0.19eV exhibited saturation at higher H doses. This was attributed to passivation by mobile H, via the formation of neutral complexes. The level at Ev+0.51eV was suggested to be a complex which involved H and B interstitials.

Hydrogen interaction with implantation-induced point defects in p-type silicon S.Fatima, C.Jagadish, J.Lalita, B.G.Svensson, A.Hállen: Journal of Applied Physics, 1999, 85[5], 2562-7