A novel method, based upon infra-red absorption and neutron irradiation techniques, was developed for the determination of interstitial O in heavily B-doped material. The new procedure used fast neutron-irradiated wafer specimens. During such neutron irradiation, free carriers with high concentrations could be trapped by the irradiated defects and the resistivity was increased. A calibration curve for the measurement of interstitial O in B-doped material was established on the basis of the annealing behavior of irradiated B-doped Czochralski material.

Neutron irradiation infrared-based measurement method for interstitial oxygen in heavily boron-doped silicon Q.Y.Wang, Z.Y.Ma, T.H.Cai, Y.H.Yu, L.Y.Lin: Semiconductor Science and Technology, 1999, 14[1], 74-6