Proton-induced defects in Ge-containing n-type material, which had been grown by using the molecular-beam epitaxy or Czochralski techniques, were studied by using deep-level transient spectroscopy after low-temperature irradiation. A level which was associated with the Ge-V pair was clearly identified with an activation enthalpy of 0.29eV relative to the conduction band. It was suggested that this level was probably the (=/-) level of the Ge-V pair. A deep-level transient spectroscopy line which was related to a possible (-/0) level was not observed.

Deep-level transient spectroscopy of the Ge-vacancy pair in Ge-doped n-type silicon C.V.Budtz-Jørgensen, P.Kringhøj, A.N.Larsen, N.V.Abrosimov: Physical Review B, 1998, 58[3], 1110-3