The relationship between the length of slip dislocations and the applied stress was investigated in wafers of B-doped Czochralski-type material with an interstitial O content of some 1.4 x 1018/cm3. The wafers were indented by using a Vickers hardness tester, and were thermally stressed by insertion into, and withdrawal from, a horizontal furnace. The length of the slip dislocations which were generated during the heat treatment was measured by X-ray topography. The results showed that the slip dislocations were generated at peripheral and central regions during furnace insertion and withdrawal, respectively. The length of the dislocations was calculated by using experimentally estimated thermal stresses. It was found that the length of the slip dislocations could be explained in terms of a model which took account of the applied stress and the dislocation velocity.

Slip length in silicon wafers caused by indentation during heat treatment M.Akatsuka, K.Sueoka, H.Katahama, N.Morimoto, N.Adachi: Japanese Journal of Applied Physics - 1, 1998, 37[10], 5444-50