The structure, formation and migration energies of kinks on the 90º partial dislocation were studied by using a first-principles method and periodic boundary conditions. It was found that, of the possible types of kink, only those that reversed the sense of the reconstruction of the dislocation on either side of them were stable. Values of 0.04 and 1.09eV were deduced for the formation and migration energies of these defects.

First-principles simulations of the structure, formation and migration energies of kinks on the 90º partial dislocation in silicon A.Valladares, J.A.White, A.P.Sutton: Physical Review Letters, 1998, 81[22], 4903-6