Monte Carlo simulation methods were used to describe the dechannelling and back-scattering of He+ ions which were channelled along the <100> axis of a defective crystal. The disorder was attributed to a buried layer of circular dislocation loops. It was concluded that the differing responses of dechannelling and back-scattering to defects cast doubt on the current assumption that these phenomena were, in some sense, identical. The energy dependence of back-scattering favored direct scattering rather than dechannelling. No linear dependence upon the number of defects was found for either the range reduction or the back-scattering yield. This conflicted with the usual assumption that the effects of isolated loops were additive.

Monte Carlo simulations of the dechannelling and back-scattering of He+ ions by loop dislocations in silicon A.M.Mazzone: Philosophical Magazine Letters, 1998, 78[4], 277-82