The effect of oxide precipitate size upon slip generation was investigated in Czochralski epitaxial wafers during processing. In the case of processes where the maximum temperature reached 1100C, the mechanical strength of epitaxial wafers was greatly superior to that of Czochralski wafers. The mechanical strength of all of the wafers was good after processes where the maximum temperature reached 1050C. Differences in slip dislocation generation were explained in terms of the size of the oxide precipitates which formed in the wafers. Precipitates which were larger than about 200nm could generate slip dislocations.

Effect of oxide precipitate size on slip generation in large-diameter epitaxial wafers M.Akatsuka, K.Sueoka, H.Katahama, Y.Koie, S.Sadamitsu: Japanese Journal of Applied Physics - 1, 1998, 37[9A], 4663-6