An investigation was made of the recombination strength, of dislocations in float-zone samples, by using the electron-beam induced-current technique. Temperature-dependent measurements served to classify the contamination levels of the dislocations. Following dislocation generation by deformation, the defects were recombination-active at temperatures ranging from 40 to 300K. This was attributed to a moderate contamination level, without precipitates. Following subsequent P diffusion, the activity of the dislocations at room temperature was below the detection limit; due to a reduced contamination level. Even after prolonged diffusion at high temperatures, it was not possible to attain the extremely weak recombination which was presumed to be the intrinsic dislocation property.

Impact of phosphorus diffusion upon the contamination level of dislocations in deformed float zone silicon K.Knobloch, M.Kittler, W.Seifert, J.J.Simon, I.Périchaud: Solid State Phenomena, 1998, 63-64, 105-14