The effect of O, and contamination, upon dislocation deep-level transient spectra was studied. The spectra of Czochralski and float-zone crystals which contained comparable dislocation densities were compared. The dislocations were introduced either by 4-point bending or cantilever bending. In the first case, the samples were deformed in air. In the second case, the samples were bent elastically at room temperature and then heated under stress in pure Ar. It was shown that the expected contamination in the first case increased the dislocation-related deep-level concentration. In the case of Czochralski samples, the difference in the deep-level transient spectra of samples deformed using the 2 methods was much more pronounced than in float-zone samples. Also in Czochralski samples, the deep-level transient spectrum was found to depend upon the deformation time. Its intensity decreased when the duration of deformation was increased.

Impurity effect on the dislocation DLTS spectrum of silicon O.V.Feklisova, G.Mariani-Regula, B.Pichaud, E.B.Yakimov: Solid State Phenomena, 1999, 67-68, 27-32