Heavily B-doped single crystals were grown successfully by using the Czochralski method. The limits of B content in the melt, which permitted dislocation-free crystal growth, was investigated. It was found that a dislocation-free crystal could be obtained even when the initial B concentration in the melt was up to 3.8 x 1020/cm3.

Heavily boron-doped silicon single crystal growth T.Taishi, X.Huang, M.Kubota, T.Kajigaya, T.Fukami, K.Hoshikawa: Japanese Journal of Applied Physics - 2, 1999, 38[3A], L223-5