The diffusion of fission products, implanted into single crystals, was studied by using Rutherford back-scattering spectroscopy. The implanted crystals were annealed, or post-implanted with Ar ions, at high temperatures and the depth profiles of fission products were analyzed. In non-implanted crystals, Cs diffusion occurred above 800C. Implantation with Ar reduced the diffusion temperature to 600C.

RBS Study of Fission Product Migration in Advanced Nuclear Fuel Materials. J.Jagielski, L.Thome, C.Binet, F.Garrido, M.Mozetic, A.Zalar: Nuclear Instruments & Methods in Physics Research B, 2000, 161-163, 686-9