Deep-level transient spectroscopy, optical deep-level transient spectroscopy and capacitance-voltage measurements were made of liquid-phase epitaxially grown Er-doped material in order to characterize deep levels. The optical properties were studied by means of photoluminescence and cathodoluminescence, and emission lines were found; one of which was at 0.806eV. It was observed that interactions occurred between dislocations and Er-related emitting centers. The photoluminescence and cathodoluminescence data strongly suggested the presence of optically active dislocations. The cathodoluminescence features indicated that this line was composed of 2 contributions; one originating from dislocations and the other being due to Er-related emission.

Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy A.Cavallini, B.Fraboni, S.Pizzini, S.Binetti, S.Sanguinetti, L.Lazzarini, G.Salviati: Journal of Applied Physics, 1999, 85[3], 1582-6