The evolution of extended defects during the annealing of MeV ion-implanted p-type samples was characterized by using deep-level transient spectroscopy and transmission electron microscopy. The specimens were implanted with Si, Ge and Sn ions having various energies, to doses ranging from 5 x 1012 to 1014/cm2, and were then annealed (800C, 0.25h). For each implanted species, there was a critical dose for the transformation from point defects to extended defects. The type of extended defect which formed depended upon the mass of the implanted species; even though the dose had been adjusted so as to create a similar damage distribution for each implanted species.

Effect of ion mass upon the evolution of extended defects during the annealing of MeV ion-implanted p-type Si S.Fatima, J.Wong-Leung, J.FitzGerald, C.Jagadish: Applied Physics Letters, 1999, 74[8], 1141-3