Defects in the oxidation-induced stacking fault ring region of as-grown Czochralski crystals which had been subjected to in situ annealing during crystal growth were investigated by means of secondary ion mass spectrometry and transmission electron microscopy. Aggregates of O were observed in the ring region of crystals which had been held for 4 or 16h. The aggregate density in crystals which had been held for 16h corresponded to the density of grown-in defects. Transmission electron microscopic observations indicated that one of the grown-in defects in the ring region of crystals which had been held for 4h was an O precipitate with a dislocation loop. The oxidation-induced stacking fault density decreased with holding time, and the density of a different defect increased with holding time at temperatures below about 1060C. It was suggested that the oxidation-induced stacking fault nuclei were O precipitates, and that the dislocation loops appeared around precipitates during an interruption of crystal growth.

Defects in the oxidation-induced stacking fault ring region of Czochralski silicon crystals K.Harada, H.Tanaka, T.Watanabe, H.Furuya: Japanese Journal of Applied Physics - 1, 1998, 37[6A], 3194-9