Electrical activity was studied in bicrystals, and in the tilt and twist boundaries of ribbons which had been grown using the edge-defined film-fed growth technique. It was shown that the electrical behavior of the grain boundaries depended upon the crystallographic structure of the boundaries. That is, upon their tilt or twist nature and upon the extent of their deviation from special orientations. It was found that differences in the electrical activity of boundaries depended upon the distribution (continuous or discontinuous) of deep traps at the grain boundary plane and of dopants around the boundary core.

Electrical activity of tilt and twist grain boundaries in silicon A.Fedotov, A.Mazanik, E.Katz, J.Ilyashuk, A.Drozdovski, L.Polyak: Solid State Phenomena, 1999, 67-68, 15-20