The ability of the slow-positron beam technique to characterize defects in the near-surface region and in thin epitaxial layers was demonstrated by applying it to ion-implantation induced defects in Si.

The slow positron beam technique R.Krause-Rehberg, S.Eichler, J.Gebauer, F.Börner: Solid State Phenomena, 1998, 63-64, 291-300