It was shown that the detailed atomic structure of vacancy-impurity complexes could be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies formed complexes with a single impurity; thus, V-P and V-As were identified in electron-irradiated samples. The formation of native vacancy defects was observed in highly As-doped material with a doping level of 1020/cm3. The defects were identified as being monovacancies which were surrounded by three As atoms. The formation of a V-As3 complex was consistent with theoretical descriptions of As diffusion and electrical deactivation in highly As-doped material.

Identification of vacancy-impurity complexes in highly n-type Si K.Saarinen, J.Nissilä, H.Kauppinen, M.Hakala, M.J.Puska, P.Hautojärvi, C.Corbel: Physical Review Letters, 1999, 82[9], 1883-6