Electron beam-induced current techniques were used to characterize intrinsically gettered Czochralski material. The effect of 3 different heat-treatment sequences, which were typically used in ultra large-scale integration, upon denuded-zone formation and O precipitation in the bulk was evaluated. The beam-induced current technique was used in a non-standard configuration, in which a Schottky diode was evaporated onto the wafer cross-section. The reduction in minority carrier diffusion length, due to the formation of recombination centers after O precipitation, was also estimated. The results of denuded-zone determination by using electron beam-induced current techniques were found to be in good agreement with surface photovoltage measurements and etching examinations.

Denuded zone and diffusion-length investigation by electron beam-induced current technique in intrinsically gettered Czochralski silicon S.Spiga, A.Castaldini, A.Cavallini, M.L.Polignano, F.Cazzaniga: Journal of Applied Physics, 1999, 85[3], 1395-400