In order to determine the dissociation energy of the 1.014eV photoluminescence Cu center in crystalline samples, the decay of the photoluminescence intensity of the center was measured by annealing specimens at various temperatures. They were prepared by Cu-contaminating using Cu solution and heat-treating 700C before rapidly cooling to room temperature. The activation energy for dissociation of the center was deduced from the temperature-dependence of the time-constant of the decay of the photoluminescence center. This activation energy was 0.47eV; which was much smaller than that (1.02eV) which was estimated from the decay of the deep-level transient spectroscopy Cu center peak at Ev+0.09eV. The present value could explain a rapid thermalization of the rearrangement of the centers after the release of stress.

Dissociation of the 1.014eV photoluminescence copper center in silicon crystals M.Nakamura: Applied Physics Letters, 1998, 73[26], 3896-8