Electron spin resonance spectra of dangling bonds (g = 2.0055) in undoped hydrogenated amorphous material were measured by using pulse and continuous-wave techniques. Spectra simulations were carried out over the entire dangling-bond spectrum. This confirmed a previous identification of the dangling bond center. The electron spin resonance parameters indicated that the dangling-bond center was localized mainly on a single Si atom, and was characterized as being strongly p-like. This was consistent with the case of a dangling bond at the interface between Si and SiO2 (Pb center).

Electron spin resonance center of dangling bonds in undoped a-Si:H T.Umeda, S.Yamasaki, J.Isoya, K.Tanaka: Physical Review B, 1999, 59[7], 4849-57