The properties of Fe-related defects in n-type material were studied, in Czochralski and float-zone specimens, by means of deep-level transient spectroscopy and Hall-effect techniques. The annealing behavior of electrically active Fe-related defects revealed that they might be related to complexes which contained interstitial Fe atoms. The formation of Fe-related defects at high temperatures included defect reaction processes such that the observed complexes might be intermediate states of consecutive reactions for Fe-related complex formation. The electrically active complexes were independent of P or O atoms. The Fe-related defects which were observed in Czochralski samples were identical to those observed in float-zone samples.

Diffusion and electrical properties of iron-related defects in n-type silicon S.Tanaka, H.Kitagawa: Japanese Journal of Applied Physics - 1, 1998, 37[9A], 4656-62