The effect of uniaxial stress upon the formation of trigonal B804 centres was investigated by means of excitonic spectroscopy. Alignment along the [111] axis, of about 70% of the centres, was obtained upon applying a uniaxial stress during defect formation.

Uniaxial stress-induced alignment of J-line centres in silicon A.S.Kaminskii, E.V.Lavrov: Solid State Communications, 1998, 106[11], 751-3