A defect which was related to C and P formed during the C-enhanced annihilation of thermal donors at 470C. By using deep-level transient spectroscopy, it was determined that the defect had a deep level at Ec-0.36eV and that its density was related to the C and P densities. The formation-rate of the defect was proportional to the P density. An 0.767eV photoluminescence line was also observed, which had already been identified as being due to a complex with a core of interstitial C, vacancy and O dimer. The Ec-0.36eV level was tentatively attributed to an interstitial C plus substitutional P pair.

Formation of carbon-related defects during the carbon-enhanced annihilation of thermal donors in silicon Y.Kamiura, T.Maeda, Y.Yamashita, M.Nakamura: Japanese Journal of Applied Physics - 2, 1998, 37[2A], L101-4