Positron annihilation spectroscopy was used to identify the P-defect complex, *D-, in n-type amorphous hydrogenated material. The positrons were attracted to, and localized at, the small open-volume which was associated with dangling-bond defects. The radiation which was detected after annihilation furnished a characteristic P signature.

Direct evidence of phosphorus-defect complexes in n-type amorphous silicon and hydrogenated amorphous silicon M.P.Petkov, M.H.Weber, K.G.Lynn, R.S.Crandall, V.J.Ghosh: Physical Review Letters, 1999, 82[19], 3819-22