In addition to the well-known spectrum of Czochralski-grown material, 2 infra-red bands (at 560 and 648/cm) were found to arise from interstitial O. The attribution of the bands was deduced from studies of their O isotope shift and temperature dependence. The 560/cm band was attributed to the hot counterpart of the mode at 518/cm, and the 648/cm band to a combination of the far-infrared mode at 29/cm with the Raman active mode at about 600/cm.

New infra-red absorption bands related to interstitial oxygen in silicon T.Hallberg, L.I.Murin, J.L.Lindström, V.P.Markevich: Journal of Applied Physics, 1998, 84[5], 2466-70