The creation of defects by H in Ag-doped crystals was investigated by means of deep-level transient spectroscopy. The electrical activity of the substitutional Ag impurities could be entirely removed via defect formation with H atoms. However, this process involved the creation of intermediate electrically-active Ag-H complexes. One of the defects, Ag-H1, contained one H atom and introduced 3 levels into the energy gap. Another electrically active complex was formed by the addition of a second H atom to the Ag-H1 defect. The Ag-H complexes were stable up to 300 to 350C. The electrically inactive complex included at least three H atoms, and annealed out at about 450C. The distance of Ag-H interaction was estimated to be very close to the lattice parameter.

Silver-hydrogen interactions in crystalline silicon N.Yarykin, J.U.Sachse, H.Lemke, J.Weber: Physical Review B, 1999, 59[8], 5551-60