The temperature-dependent annealing behavior of N-O complexes in Czochralski-type samples, which had been grown under a reduced pressure of pure N, was studied by using infra-red absorption techniques. The experimental results showed that the complexes had differing thermal stabilities. The most efficient production of the complexes occurred when the second annealing temperature was 650C. It was suggested that the presence of N probably suppressed the formation of thermal donors that were related to O.

Annealing behavior of N-O complexes in Si grown under nitrogen atmospheres X.H.Shi, P.L.Liu, G.L.Shi, S.C.Shen: Solid State Communications, 1998, 106[10], 669-71