Intrinsic and extrinsic stacking faults along the [111] direction in cubic SiC, Si, and C were studied using a first-principles scheme that was based upon density-functional theory and the local-density approximation. In contrast to the stacking-fault energies for Si and C, it was found that they were negative for SiC. The formation energies were compared with available experimental and theoretical data, and the chemical trends were derived for the geometrical changes.

Stacking faults in group-IV crystals P.Käckell, J.Furthmüller, F.Bechstedt: Physical Review B, 1998, 58[3], 1326-30