Scanning tunnelling microscopy was used to study the initial stages of the room-temperature adsorption of Ba atoms on a clean (100)-(2 x 1) surface. It was found that most of the Ba atoms were located at type-C defects, which stabilized the dimer buckling in their vicinity. The remainder were located at single dimer sites on top of the Si dimer rows. Analysis of the images revealed that the Ba/Si(100) interactions were mediated by partial charge transfer from the adsorbate to the substrate.

Initial stages of Ba adsorption on the Si(100)-(2 x 1) surface at room temperature X.Yao, X.Hu, D.Sarid, Z.Yu, J.Wang, D.S.Marshall, R.Droopad, J.K.Abrokwah, J.A.Hallmark, W.J.Ooms: Physical Review B, 1999, 59[7], 5115-9