Using first-principles calculations, a model was proposed, for defect-induced Si/Ge intermixing, that was both energetically and kinetically favorable. Dimer exchange and monomer-exchange processes were evaluated. Both were found to be energetically stable, and the respective potential barriers were 0.6 and 1.9eV.

Defect-induced Si/Ge intermixing on the Ge/Si(100) surface X.Y.Zhu, Y.H.Lee: Physical Review B, 1999, 59[15], 9764-7