Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/SiGeC heterostructures which had been grown by using solid-source molecular-beam epitaxy. Four deep levels were observed at various activation energies, ranging from 0.231 to 0.405eV below the conduction band. The largest deep-level concentration was of the deepest level, and was found to be about 2 x 1015/cm3. Although 1 to 2at% of non-substitutional C was present in the alloy layers, no deep levels were observed at any energies that had been linked to interstitial C.

Deep-level transient spectroscopy of Si/Si1-x-yGexCy heterostructures B.L.Stein, E.T.Yu, E.T.Croke, A.T.Hunter, T.Laursen, J.W.Mayer, C.C.Ahn: Applied Physics Letters, 1998, 73[5], 647-9