The interface which was formed by depositing Si3N4 layers onto bulk (100) substrates, by using electron-cyclotron resonance plasma-enhanced chemical vapor deposition, was studied by means of electron paramagnetic resonance spectroscopy. Only one interface defect, Pb0, was detected. It was characterized by a trigonal point symmetry and g|| = 2.0018, g- = 2.0089. Its areal concentration was of the order of 3 x 1011/cm2. The Pb1 center was not observed.

Electron paramagnetic resonance study of the (100)Si/Si3N4 interface P.Aubert, H.J.Von Bardeleben, F.Delmotte, J.L.Cantin, M.C.Hugon: Physical Review B, 1999, 59[16], 10677-84