Modification, by post-oxidation NO-treatment, of the interface of thermally-grown Si(100)/SiO2 layers was studied by using nuclear reaction analysis and electron paramagnetic resonance spectroscopic methods. The results demonstrated the selective incorporation of NO molecules at the interface, and a marked reduction in the interface defect density. In this new configuration the Pb center density, which was typically of the order of 2 x 1012/cm2 in as-oxidized samples, was reduced to below 1011/cm2 without any H passivation. Thermal treatment in NO atmospheres offered the possibility of the formation of H-free low-defect Si(100)/SiOxNy interfaces.

Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations L.G.Gosset, J.J.Ganem, H.J.Von Bardeleben, S.Rigo, I.Trimaille, J.L.Cantin, T.Akermark, I.C.Vickridge: Journal of Applied Physics, 1999, 85[7], 3661-5