A model was proposed for the time-dependence of the surface recombination velocity of Si interstitials at non-oxidizing (inert) interfaces. The model took account of the experimentally observed diffusion of Si interstitials through a thermal oxide. A comparison with previously published experimental results, and new experiments, demonstrated that the proposed model could accurately simulate 1-dimensional as well as 2-dimensional experiments. Analysis of the experimental data permitted the estimation of the segregation coefficients of Si interstitials at Si/oxide interfaces.

Model for the recombination velocity of silicon interstitials at non-oxidizing interfaces C.Tsamis, D.Tsoukalas: Journal of Applied Physics, 1998, 84[12], 6650-8