The passivation properties of the local oxidation of oxide/Si interface defects were investigated by means of reverse current measurement and capacitance transient spectroscopy of pn junction diodes. The present interface defects had some properties in common with those of the SiO2/Si(100) interface states of metal-oxide-silicon diodes. However, there was a marked difference between the 2 interfaces with regard to the rate of unpassivated defects which remained after H annealing. This rate was higher for LOCOS/Si interfaces than for MOS interfaces.

Passivation properties of the local oxidation of silicon-oxide/Si interface defects S.Fujieda, H.Nobusawa, M.Hamada, T.Tanigawa: Journal of Applied Physics, 1998, 84[5], 2732-4