It was noted that interstitials could recombine at the oxide/Si interface, but that previous experimental work had produced contradictory results. Transient enhanced diffusion experiments indicated an almost infinite surface recombination rate, while oxidation-enhanced diffusion data suggested a much lower recombination rate. A di-interstitial mechanism was investigated, and analytical solutions were developed. This was compared with the more commonly used interstitial mechanism. It was found that the di-interstitial mechanism could account for most of the discrepancies in the data.

Effect of the silicon/oxide interface on interstitials M.E.Law, Y.M.Haddara, K.S.Jones: Journal of Applied Physics, 1998, 84[7], 3555-60