Samples of p-type 6H material which had been subjected to 1.7MeV electron irradiation were studied by using deep-level transient spectroscopy. Two deep hole traps were observed at Ev+0.55 and Ev+0.78eV. They were identified as being 2 different defects because they have differing thermal behaviors. These defects annealed out at 200 to 500C, and were distinct from the main defects which were observed in electron-irradiated n-type material.

A deep-level transient spectroscopic study of electron irradiation-induced deep levels in p-type 6H-SiC M.Gong, S.Fung, C.D.Beling, Z.You: Journal of Applied Physics, 1999, 85[10], 7120-2