Vacancy-type defects were studied in 6H-material, after 200keV P+-implantation, by using mono-energetic positron beams. After a dose of 1013/cm2, the mean size of the open volume of defects was estimated to be close to that of divacancies. On the basis of the annealing behavior of the S-parameter which corresponded to the annihilation of positrons trapped by vacancy-type defects, the temperature range for the annealing of vacancy-type defects was divided into 3 stages. The annealing behavior in stages I (200 to 700C) and II (700 to 1000C) was attributed to the agglomeration of defects, due to the migration of monovacancies and vacancy complexes such as divacancies. In stage II, near to the defect-free region, the agglomeration of defects was suppressed by the recombination of vacancy-type defects and interstitials. Stage III (1000 to 1300C) was attributed to the formation of extended defects and their recovery.

Investigation of vacancy-type defects in P+-implanted 6H-SiC using monoenergetic positron beams A.Uedono, T.Ohshima, H.Itoh, R.Suzuki, T.Ohdaira, S.Tanigawa, Y.Aoki, M.Yoshikawa, I.Nashiyama, T.Mikado: Japanese Journal of Applied Physics - 1, 1998, 37[5A], 2422-9