A study was made of the temperature and power dependence of the photoluminescence spectra which arose from dislocations at the hetero-interface of very thin and partially strained Si0.6Ge0.4 alloys which had been grown onto Si substrates. The temperature dependence of the integrated intensities of the Si photoluminescence dislocation-lines was compared with published data. The absence of SiGe dislocation-lines was attributed to the combined effect of a small conduction-band offset and a large capture probability of carriers by dislocations in the underlying Si substrate.

Luminescence from dislocations in silicon-germanium layer grown on silicon substrate H.Lee, S.H.Choi: Journal of Applied Physics, 1999, 85[3], 1771-4