Photoluminescence spectra from a series of Si1-xGex/Si multiple quantum wells, where x ranged from 0.1 to 0.3, which had been grown under atomic H were compared with those of a series of similar samples which had been grown without atomic H. All of the samples were grown at 710C. Intense quantum confined photoluminescence was observed in samples which had been grown without atomic H. No such photoluminescence was observed in those grown with atomic H. This behavior was considered to be unexpected, since quantum confined photoluminescence was observed following the H-assisted growth of such quantum well structures when grown at lower temperatures. The behavior was attributed to the effect of defects which were introduced during growth, under atomic H, and led to the creation of efficient non-radiative centers that competed with the radiative centers. These defects led to a reduction in the photoluminescence of the samples grown under atomic H.

Photoluminescence quenching in Si1-xGex/Si multiple quantum wells G.A.Balchin, P.M.Amirtharaj, C.Silvestre, P.Thompson: Journal of Applied Physics, 1999, 85[5], 2875-80